3.0Amp General Purpose Silicon Rectifier 1N5403 Diode

General 3Amp 1N5403 Silicon Rectifier Diode With Solder Plated Terminals

 

 

1N5400~1N5408 DO-27 Datasheet.pdf

 

 

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• The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
• Open Junction chip
• Low reverse leakage
• High forward surge current capability
• High temperature soldering guaranteed

 

 

 

       

       

• Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body
• Case : Molded plastic body
• Mounting Position : Any
• Weight : 0.0345 ounce, 0.98 grams

 

 

 

 

 

Ratings at 25 °C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

 

 

 

Parameter		SYMBOLS	1N5400	1N5401	1N5402	1N5403	1N5404	1N5405	1N5406	1N5407	1N5408	UNITS
Maximum Repetitive Peak Reverse Voltage		VRRM	50	100	200	300	400	500	600	800	1000	Volts
Maximum RMS Voltage		VRMS	35	70	140	210	280	350	420	560	700	Volts
Maximum DC Blocking Voltage		VDC	50	100	200	300	400	500	600	800	1000	Volts
Maximum Average Forward Rectifier Current at TL=100°C		IF(AV)	3									Amps
Peak Forward Surge Current ,8.3msSingle Half Sine-Wave Superimposed on rated load		IFSM	150									Amps
Maximum Instantaneous Forward Voltage at 3A		VF	1.1									Volts
Maximum DC Reverse Current at rated DC blocking voltage	TA=25°C	IR	10									uA
	TA=125°C		500

 

 

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