BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET

 

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

50

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

0.22

A

Drain Current-Pulsed (Note 1)

IDM

0.88

A

Maximum Power Dissipation

PD

0.35

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

 

 

 

 

 

 

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

50

65

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=50V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±10V,VDS=0V

-

±110

±500

nA

VGS=±12V,VDS=0V

-

±0.3

±10

uA

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.6

1.1

1.6

V

Drain-Source On-State Resistance

RDS(ON)

VGS=5V, ID=0.2A

-

1.3

3

Ω

VGS=10V, ID=0.22A

-

1

2

Ω

Forward Transconductance

gFS

VDS=10V,ID=0.2A

0.2

-

-

S

Dynamic Characteristics (Note4)

Input Capacitance

Clss

VDS=25V,VGS=0V, F=1.0MHz

-

30

-

PF

Output Capacitance

Coss

-

15

-

PF

Reverse Transfer Capacitance

Crss

-

6

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

VDD=30V,ID=0.22A VGS=10V,RGEN=6Ω

-

-

5

nS

Turn-on Rise Time

tr

-

-

5

nS

Turn-Off Delay Time

td(off)

-

-

60

nS

Turn-Off Fall Time

tf

-

-

35

nS

Total Gate Charge

Qg

VDS=25V,ID=0.2A, VGS=10V

-

-

2.4

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=0.22A

-

-

1.3

V

Diode Forward Current (Note 2)

IS

-

-

0.22

A

 

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production