Leave a Message

We will call you back soon!

Your message must be between 20-3,000 characters!

Please check your E-mail!

SUBMIT

More information facilitates better communication.

Mr.
  • Mr.
  • Mrs.
OK

Submitted successfully!

We will call you back soon!

OK

Leave a Message

We will call you back soon!

Your message must be between 20-3,000 characters!

Please check your E-mail!

SUBMIT
Please leave your correct email and detailed requirements.
OK
China Fast Recovery Rectifier Diode manufacturer

Great Wisdom Huixin Innovations Unlimited 

English
  • English
  • French
  • German
  • Italian
  • Russian
  • Spanish
  • Portuguese
  • Dutch
  • Greek
  • Japanese
  • Korean
  • Arabic
  • Hindi
  • Turkish
  • Indonesian
  • Vietnamese
  • Thai
  • Bengali
  • Persian
  • Polish
Request A Quote
  • Home
  • Products
    • Fast Recovery Rectifier Diode
    • General Purpose Rectifier Diode
    • Schottky Barrier Rectifier Diode
    • Zener Diode
    • SMD Transistor
    • Silicon Bridge Rectifier
    • High Speed Switching Diode
    • TVS Transient Voltage Suppressor Diode
    • Low VF Schottky Diode
    • ESD Suppressor Diode
    • Low Voltage Mosfet
    • High Voltage Mosfet
  • About Us
  • Factory Tour
  • Quality Control
  • Contact Us
Products
Home / Products / Low Voltage Mosfet

BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET

small.img.alt
small.img.alt BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET
Basic Information
Place of Origin: China
Brand Name: Huixin
Certification: ISO9001, ISO4001, IATF16949, UL
Model Number: BSS138K
Minimum Order Quantity: 3000pcs
Price: Negotiable
Packaging Details: 3000pcs / Reel
Delivery Time: 4-5Weeks
Payment Terms: T/T, MoneyGram
Supply Ability: 1 billion pieces/ Month
Get Best Price Contact Now Chat Now
  • Detail Information
  • Product Description
Features: Rugged And Reliable Type: BSS138K N-Channel
Material: Silicon Package: SOT-23
Drain-Source Voltage: 50V Continuous Drain Current: 0.22A
Power Dissipation: 0.35W MPQ: 3000PCS
High Light:

0.22A Silicon Power MOSFET

,

0.35W Silicon Power MOSFET

,

BSS138K N Channel MOSFET

 
BSS138K N-Channel Enhancement Mode Power MOSFET
 

 

 
FEATURES
 

1. VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
    ESD Rating:HBM 2300V
2. High power and current handing capability
3. Lead free product is acquired
4. Surface mount package
 
 
 
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
 
 
 
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 50 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 0.22 A
Drain Current-Pulsed (Note 1) IDM 0.88 A
Maximum Power Dissipation PD 0.35 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃
 
 
 
Electrical Characteristics (TA=25℃unless otherwise noted)
 
 
 
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 50 65 - V
Zero Gate Voltage Drain Current IDSS VDS=50V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V - ±110 ±500 nA
VGS=±12V,VDS=0V - ±0.3 ±10 uA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.6 1.1 1.6 V
Drain-Source On-State Resistance RDS(ON) VGS=5V, ID=0.2A - 1.3 3 Ω
VGS=10V, ID=0.22A - 1 2 Ω
Forward Transconductance gFS VDS=10V,ID=0.2A 0.2 - - S
Dynamic Characteristics (Note4)
Input Capacitance Clss VDS=25V,VGS=0V, F=1.0MHz - 30 - PF
Output Capacitance Coss - 15 - PF
Reverse Transfer Capacitance Crss - 6 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) VDD=30V,ID=0.22A VGS=10V,RGEN=6Ω - - 5 nS
Turn-on Rise Time tr - - 5 nS
Turn-Off Delay Time td(off) - - 60 nS
Turn-Off Fall Time tf - - 35 nS
Total Gate Charge Qg VDS=25V,ID=0.2A,
VGS=10V
- - 2.4 nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=0.22A - - 1.3 V
Diode Forward Current (Note 2) IS   - - 0.22 A
 
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
 
 
 

Tag:

ultra low threshold voltage mosfet,

low voltage high current mosfet,

0.22A Silicon Power MOSFET

Contact Details
Marissa Wang

Phone Number : +86 15999717785

WhatsApp : +8615999717785

More Low Voltage Mosfet
  • 0.35W 0.22A Silicon Low Voltage Mosfet BSS138K N Channel Rugged And Reliable
    Show Details

    0.35W 0.22A Silicon Low Voltage Mosfet BSS138K N Channel Rugged And Reliable

    Contact Now
  • MMBT7002W 60V 115mA N Channel Signal MOSFET SC-70 SOT-323
    Show Details

    MMBT7002W 60V 115mA N Channel Signal MOSFET SC-70 SOT-323

    Contact Now
  • Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet
    Show Details

    Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet

    Contact Now
  • 0.35W N Channel 0.22A BSS138 Field Transistor Mosfets
    Show Details

    0.35W N Channel 0.22A BSS138 Field Transistor Mosfets

    Contact Now
Categories
  • Fast Recovery Rectifier Diode
  • General Purpose Rectifier Diode
  • Schottky Barrier Rectifier Diode
  • Zener Diode
Factory Tour
  • Production Line
  • OEM/ODM
  • R&D
About Us
  • Introduction
  • History
  • Service
  • Our Team
Contact Us
Guangdong Huixin Electronics Technology Co., Ltd.
Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China
86-769-22857832 marissa@hxkj.hk
  • Privacy Policy
  • Sitemap
  • Mobile Site
China Good Quality Fast Recovery Rectifier Diode Supplier. © 2019 - 2021 fastrectifierdiode.com . All Rights Reserved.