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Home / Products / Low Voltage Mosfet

0.35W N Channel 0.22A BSS138 Field Transistor Mosfets

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small.img.alt 0.35W N Channel 0.22A BSS138 Field Transistor Mosfets 0.35W N Channel 0.22A BSS138 Field Transistor Mosfets
Basic Information
Place of Origin: China
Brand Name: Huixin
Certification: ISO9001, ISO4001, IATF16949, UL
Model Number: BSS138
Minimum Order Quantity: 3000pcs
Price: Negotiable
Packaging Details: 3000pcs / Reel
Delivery Time: 4-5Weeks
Payment Terms: T/T, MoneyGram
Supply Ability: 1 billion pieces/ Month
Get Best Price Contact Now Chat Now
  • Detail Information
  • Product Description
Features: Rugged And Reliable Type: N-Channel 50-V(D-S) MOSFET
Material: Silicon Package: SOT-23
Drain-Source Voltage: 50V Continuous Drain Current: 0.22A
Power Dissipation: 0.35W Applications: Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, Etc.
High Light:

BSS138 Field Transistor Mosfets

,

0.22A Field Transistor Mosfets

,

0.35W N Channel Mosfet

 
SOT-23 Plastic-Encapsulate MOSFETS
 
BSS138 N-Channel 50-V(D-S) MOSFET
 
 
 
V(BR)DSS RDS(on)MAX ID
50 V 3.5Ω@10V 220mA
6Ω@4.5V

 

 

BSS138 SOT-23 Datasheet.pdf

 

 
FEATURES
 
 
1.High density cell design for extremely low RDS(on)
2.Rugged and Relaible
 
 
APPLICATIONS
 
 
1.Direct Logic-Level Interface: TTL/CMOS
2.Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
3.Battery Operated Systems
4.Solid-State Relays
 
 
 
Maximum ratings (Ta=25℃ unless otherwise noted)
 
 
Parameter Symbol Value Unit
Drain-Source Voltage VDS 50 V
Continuous Gate-Source Voltage VGSS ±20
Continuous Drain Current ID 0.22 A
Power Dissipation PD 0.35 W
Thermal Resistance from Junction to Ambient RθJA 357 ℃/W
Operating Temperature Tj 150 ℃
Storage Temperature Tstg -55 ~+150
 
 
ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified )
 
 
Parameter Symbol Test Condition Min Typ Max Units
Off characteristics
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 50     V
Gate-body leakage IGSS VDS =0V, VGS =±20V     ±100 nA
Zero gate voltage drain current IDSS VDS =50V, VGS =0V     0.5 µA
VDS =30V, VGS =0V     100 nA
On characteristics
Gate-threshold voltage (note 1) VGS(th) VDS =VGS, ID =1mA 0.80   1.50 V
Static drain-source on-resistance (note 1) RDS(on) VGS =10V, ID =0.22A     3.50 Ω
VGS =4.5V, ID =0.22A     6
Forward transconductance (note 1) gFS VDS =10V, ID =0.22A 0.12     S
Dynamic characteristics (note 2)
Input capacitance Ciss VDS =25V,VGS =0V, f=1MHz   27   pF
Output capacitance Coss   13  
Reverse transfer capacitance Crss   6  
Switching characteristics
Turn-on delay time (note 1,2) td(on) VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω     5 ns
Rise time (note 1,2) tr     18
Turn-off delay time (note 1,2) td(off)     36
Fall time (note 1,2) tf     14
Drain-source body diode characteristics
Body diode forward voltage (note 1) VSD IS=0.44A, VGS = 0V     1.4 V
 
 
Notes:
1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
2. These parameters have no way to verify.
 
 
 

Tag:

ultra low threshold voltage mosfet,

low voltage high current mosfet,

BSS138 Field Transistor Mosfets

Contact Details
Marissa Wang

Phone Number : +86 15999717785

WhatsApp : +8615999717785

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